Carrier conduction through the quantum barrier region in a heterostructure barrier varactor induced by an ac bias |
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| Institution: | 1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;2. National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China;1. National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, PR China;2. Center for Analysis and Measurement, Harbin Institute of Technology, Harbin 150001, PR China;3. GEMS at MLZ, Helmholtz-Zentrum Hereon Lichtenbergstrsasse 1, Garching D-85748, Germany;4. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, PR China |
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| Abstract: | By solving the time-dependent Schrödinger equation, we have studied the quantum transport of a wavepacket in a GaAs/AlGaAs heterostructure barrier varactor (HBV) diode induced by an ac bias. The current conduction of a wavepacket is complicated due to the superposition of many different stationary states. When the oscillating frequency of the external bias is relatively low, the motion of the wavepacket follows the electric field induced by the external bias. When the frequency is too high (over 1000 GHz for the GaAs/AlGaAs HBV structure under investigation), the wavepacket becomes effectively confined by the oscillating bias, and the conduction current is significantly reduced. |
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