Analysis of the performance of the quantum wire resonant tunneling field-effect transistor |
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Institution: | Department of ECE, Johns Hopkins University Baltimore, MD 21218, U.S.A. |
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Abstract: | We develop a theory of a resonant tunneling through a quantum wire placed in transverse electric field and show that transistor action can be caused via the electric-field-induced changes of the symmetry of electron wavefunctions. We evaluate the current–voltage characteristics, transconductance and speed of the proposed device and show how they can be further improved by means of bandgap engineering. |
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