Thermal conductivity of symmetrically strained Si/Ge superlattices |
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| Institution: | 2. Department of Electrical Engineering;3. Materials Science & Engineering Department, University of California, Los Angeles, CA 90095-1597, USA;4. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA;5. Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720, USA;6. Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA;7. Department of Physics;8. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. INFN - Laboratori Nazionali Frascati, via E. Fermi 40, CP 13, 00044, Frascati (RM), Italy;2. Physical-Technical Institute of Udmurt Federal Research Center of Ural Branch of RAS, Kirova str. 132, Izhevsk, 426000, Russia;3. Instytut Fizyki, im. Mariana Smoluchowskiego, Uniwersytet Jagielloński, ul. S. ?ojasiewicza 11, 30-348, Cracow, Poland;4. RICMASS - Rome International Center for Materials Science Superstripes, Via Sabelli 119A, 00185, Roma, Italy;1. G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, USA;2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA;1. National Key Laboratory for Precision Hot Processing of Metals and School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;2. State Key Laboratory of Advance Welding and Joining, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | This paper reports temperature-dependent thermal conductivity measurements in the cross-plane direction of symmetrically strained Si/Ge superlattices, and the effect of doping, period thickness and dislocations on the thermal conductivity reduction of Si/Ge superlattices. The Si/Ge superlattices are grown by molecular beam epitaxy on silicon and silicon-on-insulator substrates with a graded buffer layer. A differential 3 ω method is used to measure the thermal conductivity of the buffer and the superlattices between 80 and 300 K. The thermal conductivity measurement is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values of the superlattices are lower than those of their equivalent composition bulk alloys. |
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