Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors |
| |
| Institution: | 1. Centro de Investigación Oceanográfica COPAS Sur-Austral, Departamento de Oceanografía, Universidad de Concepción, Concepción, Chile;2. Centro FONDAP de Investigación Dinámica de Ecosistemas Marinos de Altas Latitudes (IDEAL), Valdivia, Chile;3. Escuela de Ciencias del Mar, Pontificia Universidad Católica de Valparaíso, Valparaíso, Chile;4. Centro de Investigación y Formación San Ignacio de Huinay, Huinay, Chile |
| |
| Abstract: | We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
