Energy losses of 2D electron gas due to near-surface acoustic phonon scattering |
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| Affiliation: | 1. Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI, 48202, U.S.A.;2. Institute of Semiconductor Physics, Kiev, 252650, Ukraine;3. U. S. Army Research Office, P.O. Box 12211, Research Triangle Park, NC, 27709, U.S.A.;1. Department of Earth Sciences, University College London, Gower Street, London, WC1E 6BT, UK;2. Department of Earth Sciences, The Natural History Museum, Cromwell Road, London, SW7 5BD, UK;3. ISIS Facility, STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot, Oxon, OX11 0QX, UK;1. University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China;2. Institute of Engineering Thermophysics, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;1. Faculty of Chemistry, Laboratory of Thermodynamics and Molecular Modelisation, University of Sciences and Technology Houari Boumédiène, BP32, El Alia, 16111, Bab Ezzouar, Algiers, Algeria;2. Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, Tenerife, Spain;3. Departamento de Física, Universidad de La Laguna, Tenerife, Spain;4. Département de Physique, Laboratoire d''Optoélectronique et Composants, Université Ferhat Abbas Setif, 19000 Setif, Algeria;5. Laboratoire Science des Matériaux, Faculté de Chimie, USTHB, BP 32, El Alia-16111, Bab Ezzouar, Algiers, Algeria;1. A.F. Ioffe Physico-Technical Institute, 26 Polytechnicheskaya str., 194021, St. Petersburg, Russia;2. CIEEM and ECSE, CII9017, Rensselaer Polytechnic Institute, 110-8th St., Troy, 12180-3590, USA;3. U.S. Army Research Office, Research Triangle Park, NC 27709-2211, USA;1. Department of Electrical and Computer Engineering Wayne State University, Detroit, MI 48202, USA;2. Institute of Semiconductor Physics, Kiev, 252650, Ukraine;3. U.S. Army Research Office, P.O. Box 12221, Research Triangle Park, NC 27709 USA |
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| Abstract: | We have shown that for quantum wells placed close to the stress-free surface of the semiconductor heterostructure, the energy relaxation rate of two-dimensional electrons interacting with acoustic phonons at low temperatures (Bloch–Grüneisen regime) is changed considerably in comparison with that of a two-dimensional electron gas placed in a bulk of semiconductor. The relaxation rate is enhanced in the case of a semiconductor–vacuum system and is suppressed in the case of the surface covered by a thin metal film. The enhanced energy loss is caused by additional scattering at localized and reflected acoustic waves, and the decrease appears due to suppression of piezoelectric scattering in the vicinity of the metal. |
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