Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices |
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| Institution: | 1. Department of Electronic Engineering, Osaka University, Suita, Osaka, 565-0871, Japan;2. Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106-8666, Japan;1. University Diego Portales, Program of Ethics and Public Policies in Human Reproduction; Clinica las Condes, Unit of Reproductive Medicine, Santiago, Chile;2. ICMART, Palo Alto Medical Foundation Fertility Physicians of Northern California, Palo Alto, CA, USA;3. Department of Obstetrics & Gynecology, Groote Schuur Hospital and Faculty of Health Sciences, University of Cape Town, Cape Town, South Africa;4. Department of Obstetrics, Gynecology and Reproductive Biology, Brigham and Women''s Hospital, Harvard Medical School, Boston, MA 02115, USA;5. INSERM, EIM-ESHRE, ICMART, 15 rue Guilleminot, 75014 Paris, France;6. Department of Medicine and Obstetrics and Gynecology, Keck School of Medicine, University of Southern California, Los Angeles, CA 90007, USA;7. GENERA Center for Reproductive Medicine, Valle Giulia Clinic, 00197 Rome, Italy;8. Department of Obstetrics and Gynecology, St. Olav''s University Hospital, Trondheim, Norway;9. Institute of Public Health, University of Copenhagen, Copenhagen, Denmark;10. Academic Unit of Reproductive and Developmental Medicine, Department of Oncology and Metabolism, University of Sheffield, Sheffield, UK;11. March of Dimes Foundation, White Plains, NY, USA;12. The Population Council, The Rockefeller University, New York, NY 10065, USA;1. Groupe d''Etudes des Semiconducteurs, Université Montpellier 2 - C.N.R.S. UMR357 Place E.Bataillon 34095 Montpellier, France;2. APA Optics Inc., 2950 N.E. 84th Lane, Blaine, Minnesota 55434, USA;3. Grenoble, High Magnetic Field Laboratory, MPI_FKF and CNRS, BP 166, 38042 Grenoble, France;4. Department of Electrical Engineering University of Virginia McCormick Road, Thornton Hall, Charlottesville, VA 22903-2442, USA;1. Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.;2. Philips Research Laboratories, Redhill, Surrey, U.K. |
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| Abstract: | Cyclotron resonance (CR) measurements have been carried out to evaluate the effective mass of electron in (InGaAs)n/(GaAs)nsuperlattices (SLs) and (InGaAs)n/(AlAs)nSLs. To clarify the dependence of cyclotron mass on the monolayer numbern , we measured CR signals using pulsed high-magnetic fields up to 150 T and a far-infrared laser. We found clear cyclotron resonances in the transmission of 10.6 μ m at 75 T at room temperature in (InGaAs)n/(GaAs)nSLs and little dependence on the monolayer number n in the SLs. However, for (InGaAs)n/(AlAs)nSLs, a large dependence of cyclotron mass on the monolayer number n was observed. We consider that these dependencies are related to the difference between the barrier height in the SLs and the influence of nonparabolicity on the conduction subbands in the SLs. |
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