Reflectivity modeling of Si-based amorphous superlattices |
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| Affiliation: | 1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;2. Powder and Ceramics Division, Korea Institute of Materials Science, 797 Changwon-daero, Changwon 642-831, South Korea;1. Chemistry Course, Faculty of Science, Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan;2. Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan;3. Synchrotron Radiation Research Center, Nagoya University, 1 Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan |
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| Abstract: | The structural properties of superlattices composed by hydrogenated amorphous silicon/silicon carbide (a-Si:H/a- Si1 − xCx:H) and silicon/germanium (a-Si:H/a-Ge:H), deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, were analyzed by means of small-angle X-ray diffraction. The relevant structural parameters, such as the multilayer period, the individual layer thickness, the width of the interface and the optical constants, were determined by modeling the experimental reflectivity. The model was based on the dynamical diffraction theory, including material mixing at the interface, interface roughness and random variation of component thickness. In addition, the effect of the direct beam and background on the measured intensities were considered. |
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