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ZnS:Zn,Pb蓝粉在低压阴极射线激发下的应用
引用本文:邹开顺,李岚,张海明,刘桂芬,高贵,张晓松,林久令.ZnS:Zn,Pb蓝粉在低压阴极射线激发下的应用[J].发光学报,2006,27(5):741-744.
作者姓名:邹开顺  李岚  张海明  刘桂芬  高贵  张晓松  林久令
作者单位:天津工业大学,理学院,天津,300160;天津理工大学,材料物理研究所,天津,300191;天津理工大学,材料物理研究所,天津,300191;天津工业大学,理学院,天津,300160
基金项目:天津市材料物理与化学重点学科基金;天津工业大学校科研和教改项目
摘    要:通过对ZnS:Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS:Zn,Pb的性能优于ZnS:Ag,Cl和ZnS:Zn,可适用于FED等低压显示器。

关 键 词:ZnS:Zn  Pb  阴极射线  阳极电压  阳极电流
文章编号:1000-7032(2006)05-0741-04
收稿时间:2005-05-15
修稿时间:2006-05-18

Application of ZnS:Zn,Pb Blue Phosphors under Low Voltage Cathode-ray Excitation
ZOU Kai-shun,LI Lan,ZHANG Hai-ming,LIU Gui-fen,GAO Gui,ZHANG Xiao-song,LIN Jiu-ling.Application of ZnS:Zn,Pb Blue Phosphors under Low Voltage Cathode-ray Excitation[J].Chinese Journal of Luminescence,2006,27(5):741-744.
Authors:ZOU Kai-shun  LI Lan  ZHANG Hai-ming  LIU Gui-fen  GAO Gui  ZHANG Xiao-song  LIN Jiu-ling
Institution:1.School of Science, Tianjin Polytechnic University, Tianjin 300160, China;2. Institute of Material Physics, Tianjin Institute of Technology, Tianjin 300191, China
Abstract:FEDdevices operate at much lower accelerating voltages,so the driving currents have to be greatly increased to maintain adequate brightness.Surface degradation of the phosphor occurs due to reaction with residual gases in the vacuum,and this is exacerbated by the higher current density.This degradation leads to decrease brightness of screen.In addition,the volatile by-products from the phosphor surface cause poisoning of the field emitter tips.Consequently,the FEDdevice ages at an accelerated rate.The low-voltage properties of ZnS:Zn,Pb were investigated for applications.Because of decomposition by irradiation of electron beam and generates of harmful gases such as SO2 for field emitter array,the surface coating and encapsulation of phosphors is an important technique to improve low-voltages cathodoluminescence and chemical stability and to reduce outgassing.SiO2 was used as the coating material because of its favorable band alignment when forming a heterojunction with ZnS.SiO2 exhibits minimal losses in electron penetration and has a penetration depth nearly twice as large as that of ZnS.At low excitation voltage,the surface of ZnS:Zn,Pb gets charged because of their higher resistivity.It is necessary to reduce the resistivity of the phosphor in order to improve its low voltage cathodoluminescent properties.To lower the resistivity of the ZnS:Zn,Pb,mixing the phosphor with In2O3 conductive powder have been reported.The low voltage cathodoluminescent properties of this phosphors mixed with and without In2O3 conductive powder are studied in this investigation.When mixed with In2O3,the critical voltage will decrease from 80 Vto 8 V.The CLemission intensity against voltage of ZnS:Zn,Pb is more efficient than ZnS:Ag,Cl and ZnS:Zn.The blue phosphor ZnS:Zn,Pb has an excellent luminescence properties and saturation properties under high current density.It is shown that ZnS:Zn,Pb can be used as FEDphosphor.
Keywords:ZnS:Zn  Pb
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