Laser-induced chemical etching of silicon in chlorine atmosphere |
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Authors: | P. Mogyorósi K. Piglmayer R. Kullmer D. Bäuerle |
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Affiliation: | (1) Angewandte Physik, Johannes-Kepler-Universität Linz, A-4040 Linz, Austria |
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Abstract: | Laser-induced chemical etching of single-crystalline (100) Si in Cl2 atmosphere has been investigated for continuous Ar+ and Kr+ laser irradiation at around 351 nm, and at 457.9, 488.0, 514.5, and 647.1 nm. For laser irradiances below 105 W/cm2 the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations. |
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Keywords: | 81.60 82.65 42.60 |
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