A Si nano–micro-wire array on a Si(111) substrate and field emission device applications |
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Authors: | Makoto Ishida Takeshi Kawano Masato Futagawa Yuji Arai Hidekuni Takao Kazuaki Sawada |
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Institution: | Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan |
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Abstract: | A large number of Si wires on Si(111) can be fabricated selectively by the vapor–liquid–solid growth method with a high aspect ratio greater than 100. The diameter of the wire can be controlled from less than a micron to a few hundred microns. We propose a novel smart field electron emission device using silicon nano-wires fabricated by this vapor–liquid–solid growth method, and demonstrate field electron emission with a quite low operation voltage from a gated silicon nano-wire. The threshold voltage is about 13 V, and the value is similar to those for gated carbon-nanotube field emitters. The emission current reaches 10 nA at 15 V gate voltage. |
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Keywords: | VLS growth Nano-wire Field emission Si integrated circuits |
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