On the influence of interfaces and localised stress fields on irradiation-induced point-defect distributions in silicon |
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Authors: | J. Vanhellemont A. Romano-Rodríguez |
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Affiliation: | (1) IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;(2) Present address: LCMM, Department de Física Aplicada i Electrònica, Universitat de Barcelona, bDiagonal 647, E-08028 Barcelona, Spain |
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Abstract: | High-flux 1-MeV electron irradiation in a high voltage transmission electron microscope is used to study the influence of interfaces and localised stress fields on {113}-defect generation in silicon. A semi-quantitative model is presented to explain the observations, suggesting that the silicon oxide/silicon interface is a stronger sink for self-interstitials than for vacancies. It is shown that the position and the height of the maximum of the {113}-defect density strongly depends on the strength of the interface as a vacancy sink and that compressive straining of the silicon substrate slows down the diffusion of vacancies towards the interface. |
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Keywords: | 61.80.Fe 61.70.Bv 61.70.Yq |
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