| Diode-pumped vertical external cavity surface emitting laser at 1 μm |
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| 引用本文： | 郭晓萍,陈檬,李港,宋晏荣,张炳元,张志刚.Diode-pumped vertical external cavity surface emitting laser at 1 μm[J].Chinese Optics Letters,2004(7). |
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| 作者姓名： | 郭晓萍 陈檬 李港 宋晏荣 张炳元 张志刚 |
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| 作者单位： | Laser Engineering College，Beijing University of Technology，Beijing 100022 Research Institute of Educational Equipment，Ministry of Education，Beijing 100080，Laser Engineering College，Beijing University of Technology，Beijing 100022，Laser Engineering College，Beijing University of Technology，Beijing 100022，School of Mathematics and Physical Science，Beijing University of Technology，Beijing 100022，Laser Engineering College，Beijing University of Technology，Beijing 100022，School of Mathematics and Physical Science，Beijing University of Technology，Beijing 100022 |
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| 基金项目： | The authors thank I. Sagnes and D. Romanini for the supply of the VECSEL chip. X. Guo's e-mail address is guoxp1105@yahoo.com.cn. |
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| 摘 要： | We demonstrated a diode-pumped vertical external cavity surface emitting laser with simple plane-concave cavity. When the pump power at a wavelength of 811.6 nm is 1.5 W, the maximum output power is 40.4 mW at the wavelength of 1005.8 nm. The optical-optical conversion efficiency is 2.7%. .
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