Realization of silicon quantum wires based on Si/SiGe/Si heterostructure |
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| Authors: | J L Liu Y Shi F Wang Y Lu S L Gu Y D Zheng |
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| Institution: | 1. Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing, 210008, People’s Republic of China
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| Abstract: | We report on the successful fabrication of silicon quantum wires with SiO2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires. |
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