Semiconductor Sensors for Studying the Heterogeneous Destruction of Ozone at Low Concentrations

Prospects for the use of semiconductor resistive sensors in studies of the heterogeneous destruction of ozone at low concentrations (5–400 μg/m³) were shown. The influence of various factors (sensor temperature, gas flow rate, ozone concentration) on the results of ozone concentration measurements with sensors of various types was studied. Methods for forming a sensitive layer of In₂O₃(3% Fe₂O₃) sensors with specified parameters of calibration curves were proposed. The optimum conditions for the operation of sensors in a flow mode were formulated. The results of the study of heterogeneous destruction of ozone on microfiber polymer and natural disperse (sand, coals) materials obtained by the developed method were presented.