| 氟掺杂对非晶硅薄膜特性的影响 |
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| 引用本文： | 郑若成,王印权,刘佰清,郑良晨. 氟掺杂对非晶硅薄膜特性的影响[J]. 电子与封装, 2020, 0(3): 45-47 |
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| 作者姓名： | 郑若成 王印权 刘佰清 郑良晨 |
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| 作者单位： | 中科芯集成电路有限公司 |
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| 摘 要： | 采用电容结构研究了氟(F,Flourine)掺杂非晶薄膜漏电、击穿以及温度特性。结果表明,氟掺杂钝化了非晶膜中的缺陷和悬挂键,使非晶薄膜漏电降低两个数量级,同时使击穿电压升高。掺杂非晶薄膜的漏电与温度呈指数增长,增长系数为0.0375 K^-1,击穿电压随温度线性减小,系数为0.012 V·K^-1。
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| 关 键 词： | 非晶硅 薄膜 氟掺杂 介电常数 |
Influence of Fluorine Doping on the Characteristic of Amorphous Silicon Thin Films |
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| ZHENG Ruocheng,WANG Yinquan,LIU Baiqing,ZHENG Liangchen. Influence of Fluorine Doping on the Characteristic of Amorphous Silicon Thin Films[J]. Electronics & Packaging, 2020, 0(3): 45-47 |
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| Authors: | ZHENG Ruocheng WANG Yinquan LIU Baiqing ZHENG Liangchen |
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| Affiliation: | (China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China) |
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| Abstract: | We present the result of fluorine(F)doping effect on the characteristic of amorphous thin films,including leakage current,breakdown voltage and temperature characteristic.It is observed that F doping can effectively decrease thin films leakage current and increase breakdown voltage because of passivation of dangling bond and defect by fluorine.F doping thin films leakage exponential growth with temperature,the coefficient is 0.0375 K^-1,breakdown voltage linear decrease with temperature,the coefficient is 0.012 V·K^-1. |
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| Keywords: | amorphous silicon thin film fluorine doping dielectric constant |
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