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掺三氟乙酸TGS晶体生长及其性能研究
引用本文:常新安,艾琳,臧和贵,肖卫强,涂衡.掺三氟乙酸TGS晶体生长及其性能研究[J].人工晶体学报,2006,35(3):641-644,650.
作者姓名:常新安  艾琳  臧和贵  肖卫强  涂衡
作者单位:北京工业大学材料科学与工程学院,北京,100022
摘    要:本文以三氟乙酸作为掺质,分别按4.4mol%、9.4mol%、13.4mol%、18.4mol%的配比进行了掺质TGS晶体生长,并对其作X射线粉末衍射分析及晶体热释电性能的测试。结果表明,三氟乙酸的掺入虽然使热释电性能有一定程度下降,但却使得晶体铁电-顺电相转变延迟,提高了晶体的居里点,并产生了一定的内偏压场。

关 键 词:三氟乙酸  TGS晶体  晶体生长  居里点
文章编号:1000-985X(2006)03-0641-04
收稿时间:2006-01-05
修稿时间:2006-01-05

Study on Growth and Properties of Trifluoroacetic Acid Doped TGS Crystals
CHANG Xin-an,AI Lin,ZANG He-gui,XIAO Wei-qiang,TU Heng.Study on Growth and Properties of Trifluoroacetic Acid Doped TGS Crystals[J].Journal of Synthetic Crystals,2006,35(3):641-644,650.
Authors:CHANG Xin-an  AI Lin  ZANG He-gui  XIAO Wei-qiang  TU Heng
Institution:College of Materials Science and Engineering, Beijing University of Technology, Beijing 100022 ,China
Abstract:Trifluoroacetic acid doped TGS crystals were grown from the aqueous solution with different dopant concentrations by slow-cooling method.The X-ray powder diffraction and the main pyroelectric parameters of the crystals were measured.The results show that the transition between the ferroelectric phase and the paraelectric phase is postponed,the Curie point of TFTGS single crystals is improved and inner bias voltage field is produced by doping trifluoroacetic acid although the pyroelectric properties of the crystals may be decreased to some degree.
Keywords:trifluoroacetic acid  TGS crystals  crystal growth  Curie point
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