Microwave conductivity studies on some semiconductors |
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| Authors: | V Subramanian V R K Murthy J Sobhanadri |
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| Institution: | (1) Department of Physics, Indian Institute of Technology, 600036 Madras, India |
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| Abstract: | The cavity perturbation technique is employed for the characterisation of semiconductors at microwave frequency for its conductivity.
Temperature variation of microwave conductivity studies provide the information regarding the band gap, scattering parameter
and impurity ionization energy. Change in the real part of the dielectric permittivity with conductivity indicates the change
in the momentum relaxation time. |
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| Keywords: | Cavity perturbation technique silicon microwave conductivity momentum relaxation time |
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