| 四元AlInGaN的生长研究及降低内建电场的InGaN/AlInGaN多量子阱的实现 |
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| 引用本文： | 刘乃鑫,王军喜,闫建昌,刘喆,阮军,李晋闽.四元AlInGaN的生长研究及降低内建电场的InGaN/AlInGaN多量子阱的实现[J].半导体学报,2009,30(11):113003-5. |
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| 作者姓名： | 刘乃鑫 王军喜 闫建昌 刘喆 阮军 李晋闽 |
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| 作者单位： | Institute of Semiconductors;Chinese Academy of Sciences; |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | We have demonstrated the growth of quaternary AIlnGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition （MOCVD）. The optical properties of the samples have been investigated by photoluminescence （PL） at different temperatures. The results show that the sample grown at higher temperature （850℃） exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AIlnGaN exhibited three-dimensional （3D） growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AIInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells （MQWs） with AllnGaN barriers. The peak wavelength for the InGaN/AIInGaN-MQW based light emitting diodes （LEDs） was very stable at various injection current levels because of the polarization-matched InGaN/AIInGaN MQWs.
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| 关 键 词： | MOCVD生长 多量子阱 氮化铟镓 第四纪 金属有机物化学气相沉积 发光二极管 InGaN 表征 |
| 收稿时间： | 3/23/2009 2:16:04 PM |
| 修稿时间： | 6/19/2009 1:01:31 PM |
Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD |
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| Liu Naixin,Wang Junxi,Yan Jianchang,Liu Zhe,Ruan Jun and Li Jinmin.Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD[J].Chinese Journal of Semiconductors,2009,30(11):113003-5. |
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| Authors: | Liu Naixin Wang Junxi Yan Jianchang Liu Zhe Ruan Jun and Li Jinmin |
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| Institution: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | AIInGaN UV-LEDs MOCVD |
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| Keywords: | AlInGaN UV-LEDs MOCVD |
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