Coulomb oscillations of the current through spin-nondegenerate <Emphasis Type="Italic">p</Emphasis> states of InAs quantum dots |
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Authors: | Yu N Khanin E E Vdovin S V Dubonos A Levin L Eaves M Henini |
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Institution: | (1) Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia;(2) The School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom |
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Abstract: | The electron transport is studied in split-gate structures fabricated on the basis of a modulation-doped heterostructure that contains a single quantum well and self-assembled InAs quantum dots near the 2D electron gas regions. The current passing through the channel with a denumerable set of InAs quantum dots is found to exhibit Coulomb oscillations as a function of the gate voltage. The oscillations are associated with the excited p states of InAs quantum dots, which are characterized by opposite spins and caused by lifting of the spin degeneracy of the p state due to the Coulomb interaction. The Coulomb oscillations of the current are observed up to a temperature of ~20 K. The Coulomb energy is found to be ΔEc = 12.5 meV, which agrees well with the theoretical estimates for the p states of quantum dots in the structures under study. |
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