Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

As MOSFETs shrink into the decanano regime it is predicted that random telegraph signals (RTS), resulting from trapping events in defect states near the Si/SiO₂ interface, will significantly affect analogue and digital circuit performance. At these same scales, intrinsic parameter fluctuations introduced by atomic differences between devices will also be significant. In this work, a methodology based on 3D simulation is developed which can correctly model RTS noise in the time and frequency domain in the presence of random discrete dopants. The approach is illustrated with results obtained for 30×30  nm devices. We find that atomicity can significantly increase RTS magnitude in devices with particular doping configurations, and ensemble average RTS effects vary markedly from those predicted on an assumption of continuous doping.