| 氧化钨薄膜微型电化学器件的研究 |
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| 引用本文： | 邵丙铣,陈祥君.氧化钨薄膜微型电化学器件的研究[J].分析化学,1993,21(7):861-864. |
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| 作者姓名： | 邵丙铣 陈祥君 |
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| 作者单位： | 复旦大学，复旦大学，复旦大学，复旦大学 上海 200433，上海 200433，上海 200433，上海 200433 |
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| 摘 要： | 本文论述了WO_3薄膜氢离子敏器件的结构、原理、制备技术和测试分析。利用WO_3薄膜在H+溶液中由绝缘转化为导电特性,成功地研制成氢离子敏器件。这是一种简易而经济的微型pH敏器件技术。
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| 关 键 词： | 氧化钨 薄膜 氢离子敏器件 |
Microelectrochemical Device of Tungsten Trioxide Thin Film |
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| Shao Bingxian,Chen Xiangjun,Zheng Qingping,Rong Ruifen.Microelectrochemical Device of Tungsten Trioxide Thin Film[J].Chinese Journal of Analytical Chemistry,1993,21(7):861-864. |
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| Authors: | Shao Bingxian Chen Xiangjun Zheng Qingping Rong Ruifen |
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| Abstract: | The structure, principle. fabrication technology and performance test of WO3 based pH-sensitive device are described. WO3 thin film changes from isolator to conductor by hydrogen ion (H+ ) injection in electrochemical process. The pH-sensitive device is successfully fabricated by the sensitivity to H+ of WO3 thin film. It is a simple and lower-costed sensitive technique. |
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| Keywords: | Tungsten trioxide Thin film pH-Sensitive device |
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