Nanometer-precision contour-measurement technique for the diagnostics of multilayer nanostructures

A new technique of contour measurements with nanometer precision for the diagnostics of multilayer structures and other samples applied in optical and silicon technologies, and metal processing is proposed. This paper describes the development of two main technical solutions to achieve and verify nanometer resolution of the contour measuring instrument—single-crystal-silicon guide and test plates. The use of a crystal as a linear guide gives the possibility to achieve long-term stability of its bearing surface within a few nanometers. A test sample of a multilayer structure is developed and its parameters are controlled by means of transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption near edge spectroscopy (XANES). The results of measuring test samples with a step height of 100 and 200 nm by means of the contour measurement technique are presented.