Effect of long-range stresses on the structure of semiconductor heterosystems

The dependence between the misfit value of the interface layers f and the structural parameters of the misfit dislocations is obtained for arbitrary orientation of the interface of a semiconductor heterosystem subjected to the complete relaxation of misfit stresses. Such parameters are the distance D _i between neighboring dislocations of the ith family and projection of the edge component of the Burgers vector onto the interface (b _i ^e ). The number of families incorporated into the interface is determined by the orientation of the boundary and occurrence of the relaxation process. The role of specific cases of this expression for experimental and technological applications is discussed using the appearance of long-range shear and normal stresses in films with orientations of (001) and (111) as examples.