Photoluminescence of implantation-induced defects in SiO2:Pb+ glasses |
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Authors: | A F Zatsepin E A Buntov V S Kortov V A Pustovarov N V Gavrilov |
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Institution: | 1. Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russia
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Abstract: | The luminescence of quartz glass with implanted Pb+ ions is investigated by time-resolved photoluminescence spectroscopy under synchrotron excitation. It is established that the glass layer modified with ions represents a microheterogeneous medium with a variable content of implanted ions predominantly in the form of Pb2+. Three different types of emission centers are detected that are created by radiation-induced defects of the SiO2 matrix and localized electronic states of the amorphous lead-silicate phase. |
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