首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Photoluminescence of implantation-induced defects in SiO2:Pb+ glasses
Authors:A F Zatsepin  E A Buntov  V S Kortov  V A Pustovarov  N V Gavrilov
Institution:1. Ural Federal University, ul. Mira 19, Yekaterinburg, 620002, Russia
Abstract:The luminescence of quartz glass with implanted Pb+ ions is investigated by time-resolved photoluminescence spectroscopy under synchrotron excitation. It is established that the glass layer modified with ions represents a microheterogeneous medium with a variable content of implanted ions predominantly in the form of Pb2+. Three different types of emission centers are detected that are created by radiation-induced defects of the SiO2 matrix and localized electronic states of the amorphous lead-silicate phase.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号