| 高居里点(1-x)Ba_(0.998)La_(0.002)TiO_3+xBi_4Ti_3O_(12)系统陶瓷微观结构及温度特性的研究 |
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| 引用本文： | 蒲永平,王瑾菲,赵新,杨公安,陈小龙,吴胜红.高居里点(1-x)Ba_(0.998)La_(0.002)TiO_3+xBi_4Ti_3O_(12)系统陶瓷微观结构及温度特性的研究[J].人工晶体学报,2009,38(5):1119-1122. |
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| 作者姓名： | 蒲永平 王瑾菲 赵新 杨公安 陈小龙 吴胜红 |
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| 作者单位： | 陕西科技大学材料科学与工程学院,西安,710021;东莞市龙基电子有限公司,东莞,523000 |
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| 基金项目： | 国家自然科学基金(No.50607013);;教育部科学技术研究重点项目(No.209126);;陕西省教育厅专项科研基金(08KJ222) |
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| 摘 要： | 采用传统陶瓷制备工艺制备(1-x)Ba_(0.998)La_(0.002)TiO_3+ xBi_4Ti_3O_(12) (0≤x≤0.01)系统陶瓷.对在还原气氛(氮气)中烧成的陶瓷样品在一定温度下进行再氧化处理.研究了不同Bi_4Ti_3O_(12)掺杂浓度以及再氧化过程对BaTiO_3微观结构、介电性能及居里温度Tc的影响.结果表明:掺杂Bi_4Ti_3O_(12)后,BaTiO_3陶瓷的晶粒尺寸明显减小;Bi_4Ti_3O_(12)具有提高陶瓷居里点温度的作用,当x=1.0时,居里温度提高到T_c=150 ℃.随着BIT加入量的增加,电子与缺位混合补偿,晶格中将产生金属离子缺位,以补偿多余电子,因此随着BIT掺入量的增加,电阻率逐渐增大.
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| 关 键 词： | Ba_(0.998)La_(0.002)TiO_3 Bi_4Ti_3O_(12) 显微结构 居里温度 |
Investigation on Microstructure and Resistivity-temperature Properties of (1-x)Ba0.998La0.002TiO3 +xBi4Ti3O12 System Ceramics with High Curie Temperature |
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| PU Yong-ping,WANG Jin-fei,ZHAO Xin,YANG Gong-an,CHEN Xiao-long,WU Sheng-hong.Investigation on Microstructure and Resistivity-temperature Properties of (1-x)Ba0.998La0.002TiO3 +xBi4Ti3O12 System Ceramics with High Curie Temperature[J].Journal of Synthetic Crystals,2009,38(5):1119-1122. |
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| Authors: | PU Yong-ping WANG Jin-fei ZHAO Xin YANG Gong-an CHEN Xiao-long WU Sheng-hong |
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| Institution: | 1.School of Materials Science and Technology;Shaanxi University of Science and Technology;Xi'an 710021;China;2.Dongguan Longkey Electronic Co.;Ltd.;Dongguan 523000;China |
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| Abstract: | (1-x)Ba_(0.998)La_(0.002)TiO_3 + xBi_4Ti_3O_(12) (0≤x≤0.01) system ceramics were prepared by solid-state reaction technology. The samples were sintered in reducing atmosphere (nitrogen) and then reoxidized. The microstructure of samples were characterized by SEM, electrical properties were analyzed by the resistivity-temperature testing apparatus and capacitance testing selector. The results showed that the grain size of BaTiO_3 ceramics significantly decreased after doping Bi_4Ti_3O_(12); Curie temperature of ceramics increased (T_c= 150 ℃). As the addition of the amount of BIT increasing, the electron and vacancies compensated each other, extra electrons were compensated with lattice metal ions vacancy, thus resistivity gradually increased. |
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| Keywords: | Ba0 998La0 002TiO3 Bi4Ti3O12 microstructure curie temperature |
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