Investigation of doping in Si crystals by means of electroreflectance

Summary In this work the importance of electroreflectance is evidenced in two specific applications concerning studies of semiconductor surfaces: i) determination of junction depths and carrier profiles, ii) mapping of inhomogeneity curves of the carrier distribution on Si surfaces. New information in both cases is obtained and briefly discussed. Work partially supported by Progetto Finalizzato Energetica (Sottoprogetto Energia Solare) of consiglio Nazionale delle Ricerche.