Photoacoustic saturation spectra of GaSe,GaTe and InSe layered semiconductors |
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| Affiliation: | 1. Department of Physics, Faculty of Science AL Faisaliah, King Abdul-Aziz University, Jeddah, Saudi Arabia;2. Nanotechnology Research Laboratory, Department of Physics, Faculty of Science, University of Tabuk, Tabuk, Saudi Arabia;3. Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahweet, Yemen;1. Shenzhen Key Laboratory of Special Functional Materials & Shenzhen Engineering Laboratory for Advance Technology of Ceramics, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, PR China;2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, PR China;3. JANUS (Dongguan) Precision Components Co., Ltd., PR China;4. State Key Laboratory of Solidification Processing, Carbon/Carbon Composites Research Center, Northwestern Polytechnical University, Xi''an 710072, PR China;1. Department of Physics, Arab American University, Jenin, Palestine;2. Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. College of Physics and Electronic Engineering, Xinxiang University, Xinxiang, 453003, China;2. College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China;3. School of Physics, Anyang Normal University, Anyang, 455000, China;1. Physics Department, Faculty of Science- Al Faisaliah Campus, King Abdulaziz University, Jeddah, Saudi Arabia;2. Groups of Physics at AAUJ and at Faculty of Engineering, Atilim University, 06836 Ankara, Turkey |
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| Abstract: | ![]()
The photoacoustic spectra in GaSe, GaTe and InSe semiconductors have been measured in the region of energy greater than the fundamental absorption edge. In this range the photoacoustic signal magnitude can be regarded as independent of the absorption coefficient, i.e. photoacoustic spectroscopy in saturation region, and the dips in the spectra are ascribed to the optical reflection effect inherent in semiconductors interband transitions. The photoacoustic signal phase spectra have been also measured; they are shown to be a useful check of the structures observed in the magnitude saturation spectra. The experimental results are in good agreement with the allowed interband transition energies as observed in thermo-reflectance, electroreflectance and normal reflectivity experiments. |
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