Raman study of the mechanism of electrical switching in Cu TCNQ films |
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| Affiliation: | 1. National Research Center “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia;2. Moscow Institute of Physics and Technology (State University), Institutsky per. 9, 141701 Dolgoprudny, Moscow region, Russia;3. Federal Scientific Research Center “Crystallography and Photonics” Russian Academy of Science, Leninsky prosp. 59, 119333 Moscow, Russia;1. Department of Electronic Engineering, Sogang University, 1 Shinsu-dong, Mapo-gu, Seoul 121-742, Republic of Korea;2. Samsung Advanced Institute of Technology, San 14, Nongseo-dong, Giheung-gu, Yongin-si, Gyunggi-do, Republic of Korea;3. Center for Electricity and Magnetism, Korea Research Institute of Standards and Science, Gajeongro 267, Yuseong-gu, Daejeon-si 305-040, Republic of Korea;1. Ian Potter NanoBioSensing Facility, NanoBiotechnology Research Laboratory, School of Science, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia;2. Functional Materials and Microsystems Research Group, School of Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia;3. RMIT Microscopy and Microanalysis Facility, College of Science, Engineering and Health, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia;4. School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, QLD 4001, Australia;5. School of Science, RMIT University, GPO Box 2476, Melbourne, VIC 3001, Australia |
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| Abstract: | The mechanism of electrical switching in Cu/Cu TNCQ films has been studied in situ by Raman spectroscopy. The initial film is Cu+TCNQ-., while neutral TCNQ was found after electrical switching in amounts increasing with time of application of the electric field. |
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