Near IR absorption in films of silicon containing oxygen |
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| Authors: | SO Sari PHollingsworth Smith H Oona |
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| Institution: | Optical Sciences Center, University of Arizona, Tucson, AZ 85721, U.S.A.;Department of Physics and Van de Graaff Laboratory, University of Arizona, Tucson, AZ 85721, U.S.A. |
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| Abstract: | A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given. |
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