Electrically tunable magnetic configuration on vacancy-doped GaSe monolayer |
| |
Authors: | Weiqing Tang Congming Ke Mingming Fu Yaping Wu Chunmiao Zhang Wei Lin Shiqiang Lu Zhiming Wu Weihuang Yang Junyong Kang |
| |
Institution: | 1. Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;2. Key Laboratory of RF Circuits and System of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China |
| |
Abstract: | Group-IIIA metal-monochalcogenides with the enticing properties have attracted tremendous attention across various scientific disciplines. With the aim to satisfy the multiple demands of device applications, here we report a design framework on GaSe monolayer in an effort to tune the electronic and magnetic properties through a dual modulation of vacancy doping and electric field. A half-metallicity with a 100% spin polarization is generated in a Ga vacancy doped GaSe monolayer due to the nonbonding 4p electronic orbital of the surrounding Se atoms. The stability of magnetic moment is found to be determined by the direction of applied electric field. A switchable magnetic configuration in Ga vacancy doped GaSe monolayer is achieved under a critical electric field of 0.6 V/Å. Electric field induces redistribution of the electronic states. Finally, charge transfers are found to be responsible for the controllable magnetic structure in this system. The magnetic modulation on GaSe monolayer in this work offers some references for the design and fabrication of tunable two-dimensional spintronic device. |
| |
Keywords: | Two-dimensional material Magnetic configuration Electric field First-principles calculations |
本文献已被 ScienceDirect 等数据库收录! |