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Influence of sintering atmosphere and thermobaric treatment (TBT) on dielectric behaviors of CaCu3Ti4O12 ceramics
Authors:Ling-Fang Xu  Cong Mao  Vyacheslav V Marchenkov  Kang Sun  Tatyana V Dyachkova  Alexander P Tyutyunnik  Yurii G Zainulin  Chang-Ping Yang  Shi-Heng Liang
Institution:1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China;2. M.N. Miheev Institute of Metal Physics, Ekaterinburg 620990, Russia;3. Ural Federal University, Ekaterinburg 620002, Russia;4. Institute of Solid State Chemistry, Ekaterinburg 620990, Russia
Abstract:Copper titanate (CaCu3Ti4O12, or CCTO) ceramics sintered in oxygen and vacuum at 1100°C for 12 h have been treated by thermobaric treatment (TBT) at 9 GPa and 1000°C for 10 min and then quenched in liquid nitrogen (LN2). Pure cubic body-centered perovskite-related structure was confirmed from XRD results. Besides, after TBT and quenching, additional minor peaks of TiO2 and Cu were indexed, as well as a little cell volume expansion. A little reduction of the grain size as well as fuzzy grain boundaries can be observed in FE-SEM after TBT. The dielectric constant ε' of CCTO ceramics sintered in oxygen (~4600 @ 100 Hz) were a half of those treated by TBT and quenching (~9600 @ 100 Hz), whereas the value decreased almost by an order of magnitude (from 105 to 104) after TBT and quenching for the samples sintered in vacuum. The complex impedance spectra at high temperature showed three semicircles so a three RC model was used to explain the different relaxation regions consisting of grain, grain boundary and domain boundary. Besides, two relaxation peaks appeared in the frequency dependence of the imaginary part of the electric modulus formalism M? and the complex impedance Z?. Moreover, the contributions of grain boundaries can be figured out by the relaxation activation energy Ere (338–629 meV) and the conduction one Edc (396–823 meV) fitted by M? and Z? plots separately. As a result, the disorder and heterogeneity typical of grain boundaries should be responsible for the giant dielectric relaxation characteristics of CCTO ceramics, which can be affected by the sintering atmosphere as well as the extreme treating conditions.
Keywords:Ceramics  Dielectric response  Grain boundaries  High-pressure
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