Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells |
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Authors: | Lihua Teng Tianran Jiang Xia Wang Tianshu Lai |
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Affiliation: | 1. Optoelectronic Materials and Technologies Engineering Laboratory of Shandong, Department of Physics, Qingdao University of Science and Technology, Qingdao, 266061, China;2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China |
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Abstract: | Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping. |
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Keywords: | (110) GaAs quantum wells Carrier recombination Spin relaxation Spin-polarization dependent |
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