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Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons
Authors:Kuanhong Li  Xiang-Hua Zhang
Affiliation:1. State Grid Fujian Fuzhou Electric Power Supply Company, Fuzhou, Fujian, 350009, China;2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;3. Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101, China
Abstract:We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.
Keywords:Embedded graphene nanoribbon  Asymmetrical edges  Current polarization  Spin devices
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