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Transport properties of single crystal
Authors:Shigeyuki Ishida   Masamichi Nakajima   Hijiri Kito   Yasuhide Tomioka   Toshimitsu Ito   Akira Iyo   Hiroshi Eisaki  Shin-ichi Uchida
Affiliation:aDepartment of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;bNational Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Central 2, Umezono, Tsukuba, Ibaraki 305-8568, Japan;cJST, Transformative Research-Project on Iron Pnictides (TRIP), 5 Sanbancho, Chiyoda, Tokyo 102-0075, Japan
Abstract:Transport properties of BaNi2P2 single crystals prepared by high-pressure synthesis method have been investigated. The temperature dependence of the resistivity is that of a typical metal with the anisotropy ratio ρperpendicular/ρdouble vertical bar of not, vert, similar6.3 and suggests that electron–phonon interaction dominates the scattering mechanism. We have also found that the Hall effect and the magnetoresistance can be explained by a two-carrier model which is consistent with a multiple-band structure with both hole and electron characters.
Keywords:  mml11"  >  text-decoration:none   color:black"   href="  /science?_ob=MathURL&_method=retrieve&_udi=B6TVJ-4WDGCR9-2&_mathId=mml11&_user=10&_cdi=5536&_rdoc=14&_acct=C000069468&_version=1&_userid=6189383&md5=bcfa83aa62dbdafbc5a04dec614ce8eb"   title="  Click to view the MathML source"   alt="  Click to view the MathML source"  >ThCr2Si2-type structure   Hall effect   Magnetoresistance
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