The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films |
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| Authors: | J O Olowolafe I Rau K M Unruh C P Swann Z Jawad T Alford |
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| Institution: | (1) Department of Electrical and Computer Engineering, University of Delaware, 19716 Newark, Delaware;(2) Department of Physics and Astronomy, University of Delaware, 19716 Newark, DE;(3) Department of Chemical, Bio, and Materials Engineering, Arizona State University, 85287 Tempe, Arizona |
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| Abstract: | The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using
x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to
tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio.
While Ta0.28Si0.07N0.65 starts to crystallize at about 900°C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100°C. In-situ sheet resistance measurement showed that
the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower
resistivity. The resistivity of the films, at 30°C, was about 675 Θ-cm, 285 Θ-cm, and 135 Θ-cm and decreased to 61.5 Θ-cm,
22.5 Θ-cm, and 19.5 Θ-cm at 480°C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity
films that could be used in device applications. |
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| Keywords: | Resistivity sheet resistance anneal thermal stability Ta-Si-N |
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