Experimental study of mode characteristics for equilateral triangle semiconductor microcavities |
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引用本文: | 陆巧银,陈晓红,国伟华,于丽娟,黄永箴,王建,罗毅. Experimental study of mode characteristics for equilateral triangle semiconductor microcavities[J]. 中国光学快报(英文版), 2003, 1(8) |
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作者姓名: | 陆巧银 陈晓红 国伟华 于丽娟 黄永箴 王建 罗毅 |
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作者单位: | State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084,State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084 |
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基金项目: | This work was supported by the National Natural Science Foundation of China under Grant No.60225011, and Major State Basic Research Program under Grant No.G2000036606. |
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摘 要: | Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10μm. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.
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Experimental study of mode characteristics for equilateral triangle semiconductor microcavities |
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Abstract: | Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well asthe active region are fabricated by the inductively coupled plasma (ICP) etching technique. The modecharacteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaksof the photoluminescence spectra corresponding to the fundamental transverse modes are observed formicrocavities with side lengths of 5 and 10 μm. The mode wavelength spacings measured experimentallycoincide very well with those obtained by the theoretical formulae. |
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