飞秒激光微构造硅光电二极管的光电响应

在一定条件SF6气体氛围中，硅可在飞秒激光辐照区产生m量级的尖峰结构。针对不同尖峰高度的微构造硅，在不同温度下退火，采用电子蒸发的方法在正反面分别镀上铝电极，制备出了飞秒激光微构造光电二极管，并测试了其光电响应。实验结果表明:飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3～4 m的样品在973 K温度退火30 min后，响应度可达0.55 A/W。即使在1100 nm波长处，这种新型的硅光电二极管的响应仍可高达0.4 A/W。

Responsivity of femtosecond-laser microstructured silicon photodiodes

We investigated responsivity of photodiodes fabricated with silicon that was microstructured by femtosecond-laser pulses in a sulfur-containing atmosphere. In different temperature annealing, the aluminum electrodes were prepared using the electron evaporation method according to different spike height of microstructured silicon. The femtosecond laser microstructured photodiodes were made, and the opto-electronic responsivities of photodiodes was measured. Test results show that the responsivity of photodiodes depends on the height of spikes and annealing temperature, the responsivity can be as high as 0.55 A/W. For wavelengths of 1100 nm below the bandgap we obtained responsivities about 0.4 A/W, which is higher than that for standard silicon photodiodes.