| 氮化铝薄膜的组成分析 |
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| 引用本文： | 许小红,武海顺,张富强,张聪杰,金志浩. 氮化铝薄膜的组成分析[J]. 应用化学, 2001, 18(3): 233-0 |
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| 作者姓名： | 许小红 武海顺 张富强 张聪杰 金志浩 |
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| 作者单位： | 陕西师范大学，西安交通大学 |
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| 基金项目： | 国家自然科学基金（29741004）和教育部高等学校骨干教师基金和山西省自然科学基金联合资助项目 |
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| 摘 要： | Al N是一种无机非铁性压电材料 ,具有宽的带隙、高的电阻率、高的抗击穿电压、高的声传播速率和低的传输损耗 ,在微电子器件中有着广泛的应用前景 [1] .由于 Al N薄膜的声速在整个无机非铁性材料中最高 ,因而成为 GHz级声表面波器件的首选材料 [2 ] .要实现 Al N薄膜的表面声波器件应用 ,不但结构重要 [1] ,组成也很重要 [3] ,因为薄膜的组成对其性质影响很大 .Al N压电薄膜要求整个膜层的 Al/N比一致 .富 Al会使薄膜介电性能变差 ,富 N会使薄膜结构致密度变差 .因而对其组成研究是非常重要的 .Penza等 [3] 采用X射线光电子能谱 ( X…
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| 关 键 词： | X射线光电子能谱 氮化铝薄膜的组成分析 |
| 文章编号： | 1000-0518(2001)03-0233-03 |
| 收稿时间： | 2009-06-29 |
| 修稿时间： | 2000-06-25 |
Component Analysis of theAlN Thin Films |
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| XU Xiao Hong a,b,WU Hai Shun a,ZHANG Fu Qiang b,ZHANG Cong Jie a,JIN Zhi Hao b. Component Analysis of theAlN Thin Films[J]. Chinese Journal of Applied Chemistry, 2001, 18(3): 233-0 |
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| Authors: | XU Xiao Hong a b WU Hai Shun a ZHANG Fu Qiang b ZHANG Cong Jie a JIN Zhi Hao b |
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| Affiliation: | XU Xiao Hong a,b,WU Hai Shun a*,ZHANG Fu Qiang b,ZHANG Cong Jie a,JIN Zhi Hao b |
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| Abstract: | The component of the surface and profile of AlN films have been investigated using X ray photoelectron spectrometry(XPS). The results show that the surface of the films was composed by Al, N, O and C elements. C and O contaminations are attributed both to the sputtering chamber venting and to exposure of the films to air. According XPS depth profile analysis, it is found that the composition of the film along the growth axis is nearly uniform, and Al/N ratio is close to that in the AlN stoichiometry. Beneath the surface, the amount of O in the film is found below 5%. |
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| Keywords: | AlN thin film component XPS |
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