| GaAs/InP异质外延材料的光致发光研究 |
| |
| 引用本文： | 李玉东,王本忠.GaAs/InP异质外延材料的光致发光研究[J].光子学报,1993,22(2):126-131. |
| |
| 作者姓名： | 李玉东 王本忠 |
| |
| 作者单位： | 吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系，吉林大学电子科学系 集成光电子学国家重点联合实验室吉林大学实验区，长春 130023，集成光电子学国家重点联合实验室吉林大学实验区，长春 130023，集成光电子学国家重点联合实验室吉林大学实验区，长春 130023，集成光电子学国家重点联合实验室吉林大学实验区，长春 130023，集成光电子学国家重点联合实验室吉林大学实验区，长春 130023 |
| |
| 摘 要： | 首次对MOCVD-LPE混合外延生长的GaAs/InP材料进行了光致发光测量及分析。结果显示出混合生长的GaAs发光强度明显高于MOCVD一次外延生长的GaAs的发光强度,并确认在16K温度下GaAs和InP有跃迁激子产生。观测到GaAs/InP样品近带边光致发光谱的半峰宽为8.4meV,显示了这种材料的高质量。
|
| 关 键 词： | 异质外延 光致发光 GaAs InP 激子 |
| 收稿时间： | 1992-05-16 |
STUDIES ON PHOTOLUMINESCENCE OF HETEROEP IT AXIAL GaAs/ InP MATERIAL |
| |
| Li Yudong,Wang Benzhong,Wang Rufeng,Liu Shiyong,Su Shichang.STUDIES ON PHOTOLUMINESCENCE OF HETEROEP IT AXIAL GaAs/ InP MATERIAL[J].Acta Photonica Sinica,1993,22(2):126-131. |
| |
| Authors: | Li Yudong Wang Benzhong Wang Rufeng Liu Shiyong Su Shichang |
| |
| Institution: | Li Yudong,Wang Benzhong,Wang Rufeng,Liu Shiyong,Su ShichangDepartment of Electronics Science,Jilin University, National Integrated Optoelectronics Laboratory,Jilin University Region: Changchun,130023 |
| |
| Abstract: | Photoluminsscence of GaAs/InP grown by MOCVD-LPE hybrid epitaxial growth technique has been first measured and analyzed. It has been showed that the luminescence intensity of GaAs grown by hybrid growth technique is much higher than that of GaAs grown by MOCVD one-step epitaxial growth. Several transition excitons of GaAs and InP have been identified at 16 K. A FWHM of 8, 4 meV of near-band-edge PL spectrum from a GaAs/InP sample has been observed, which exhibits its high quality. |
| |
| Keywords: | Heteroepitaxy Photoluminescence GaAs InP Exciton |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《光子学报》浏览原始摘要信息 |
| 点击此处可从《光子学报》下载免费的PDF全文 |
|
