Synthesis and properties of In2(Se1-xTex)3 thin films: a new semiconductor compound |
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Authors: | M. Emziane R. Le Ny |
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Affiliation: | (1) L. P. I. O., Faculté des Sciences et des Techniques, Université de Nantes, 2 Rue de la Houssiniere, Nantes, France (Fax: +33-2/5112-5533, E-mail: Roger.Leny@physique.univ-nantes.fr), FR |
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Abstract: | In2(Se1-xTex)3 polycrystalline films were prepared by a dual-source thermal evaporation technique. The depositions onto glass and SnO2-coated glass substrates were carried out in a vacuum chamber and followed by an annealing in neutral ambient (Ar or N2). The structural, morphological and compositional studies of the films were made by X-ray diffraction, energy-dispersive X-ray analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, Raman scattering and optical transmission. Optimum conditions are investigated for the formation of the ternary compound In2(Se1-xTex)3 in order to tune the band gap by changing the Te concentration. The film properties as a function of Te amount are discussed. It is shown that single-phase, textured and homogeneous layers of In2(Se1-xTex)3 can be grown with x≤0.2 at optimal deposition and heat treatment conditions. For x≅0.17 these films showed an energy band gap of about 1.45 eV and an electrical conductivity at room temperature six orders of magnitude higher than that of the binary γ-In2Se3 thin films. Received: 9 July 1999 / Accepted: 25 November 1999 / Published online: 13 July 2000 |
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Keywords: | PACS: 61.16.d 68.55.a 81.15.Ef |
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