Field-dependent mobility characteristics of a two-dimensional electron gas due to quasi-elastic interaction with intravalley acoustic phonons

The field-dependent mobility characteristics of the carriers in a two-dimensional electron gas (2DEG) are obtained considering the finite energy of phonons in the energy balance equation of electron-phonon system for quasi-elastic interaction with intravalley acoustic phonons. Both the high- and low-field mobility characteristics turn out to be significantly different from those that follow from the traditional approximation. The numerical results are presented for Si and GaAs. The inadequacies of the theory are pointed out and the scope for further refinement is discussed.