Experimental and theoretical investigation of the pyroelectric effect of the p-n junction in a paraelectric non-polar semiconductor |
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Authors: | AV ButenkoV Sandomirsky R KahatabiZ Dashevsky V KasiyanZ Zalevsky Y Schlesinger |
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Institution: | a Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel b Materials Engineering Department, Ben-Gurion University of the Negev, P.O.B. 653, Beer-Sheva 84105, Israel c School of Engineering, Bar-Ilan University, Ramat-Gan 52900, Israel |
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Abstract: | We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10-130 K), reverse bias voltage (up to −500 mV) and chopping frequency (4-2000 Hz). The pyroelectric coefficient is ≈10−3 μC/cm2K in the temperature region 40-80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed. |
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Keywords: | Pyroelectric effect Paraelectric semiconductor p-n Junction |
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