| 室温光荧光谱分析中的几个典型问题 |
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| 引用本文： | 刘英斌,赵润,林琳,陈宏泰,杨红伟,崔崎.室温光荧光谱分析中的几个典型问题[J].微纳电子技术,2008,45(6):338-341. |
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| 作者姓名： | 刘英斌 赵润 林琳 陈宏泰 杨红伟 崔崎 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 根据光荧光谱的测试原理,针对具体的化合物半导体材料的层次结构,归纳、总结出两个实用的分析模型:光荧光谱的厚度干涉模型和透明衬底发光模型。应用厚度干涉模型,对GaN外延材料、带DBR结构的MQW材料的光荧光谱曲线进行了分析,并解释了AlGaInP LED结构PL扫描图的强度分布。应用透明衬底发光模型,分析并解释了InGaAs材料的发光强度图案。实验结果表明,这两个分析模型能很好地解释薄膜外延层的PL光谱曲线,能够分析光荧光谱的曲线形状和强度分布与材料结构及表面状态的关系,对判断材料品质有较大帮助,具有一定的实用价值。
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| 关 键 词： | 光荧光扫描 多量子阱 厚度干涉条纹 透明衬底 室温 |
Typical Problems in the Analysis of Room Temperature PL Measurement |
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| Liu Yingbin,Zhao Run,Lin Lin,Chen Hongtai,Yang Hongwei,Cui Qi.Typical Problems in the Analysis of Room Temperature PL Measurement[J].Micronanoelectronic Technology,2008,45(6):338-341. |
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| Authors: | Liu Yingbin Zhao Run Lin Lin Chen Hongtai Yang Hongwei Cui Qi |
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| Institution: | Liu Yingbin,Zhao Run,Lin Lin,Chen Hongtai,Yang Hongwei,Cui Qi(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | Based on the principle of photoluminescence measurement and the structures of alloy semiconductors,the thickness interference model and the emitting from transparent substrate model for practical analysis were concluded. Using the thickness interference model,the PL spectra of GaN-based materials and AlGaInP MQWs with DBR were analyzed,the PL peak intensity mapping pattern of typical AlGaInP LED was also explained.The emitting from transparent substrate model was used for analyzing the PL peak intensity map... |
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| Keywords: | photoluminescence(PL) mapping multiple quantum wells(MQW) thickness interference fringes transparent substrate room temperature |
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