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Simulation of stress-strain state in SiGe island heterostructures |
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| Authors: | R V Goldstein V A Gorodtsov P S Shushpannikov |
| Institution: | (1) A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentyev Avenue, 13, Novosibirsk, 630090, Russia;(2) Center for Condensed Matter Sciences and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei, 106, Taiwan, R.O.C |
| Abstract: | The problem of simulation of the stress-strain state in SiGe island heterostructures is considered. The analytic-numerical method of multipole expansions is used to obtain an approximate solution. The problem of the stressed state influence on the diffusion mobility of atoms adsorbed on the heterostructure free surface is also discussed. |
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