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Nonlinear transport in p-type SiGe quantum well structure containing Ge quantum dots |
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| Authors: | K -M Haendel U Denker O G Schmidt A G M Jansen R J Haug |
| Institution: | a Institut für Festkörperphysik, Universität Hannover, Appelstrasße 2, Hannover 30167, Germany;b Max-Planck-Institut für Festkörperforschung, Heisenbergstraße, 1, Stuttgart 70569, Germany;c Grenoble High Magnetic Field Laboratory, MPIF-CNRS, Boite Postale 166, Grenoble Cedex 09 38042, France |
| Abstract: | We use magneto-transport spectroscopy to study a dramatic instability between a low and high conductivity mode in Si/SiGe-based resonant tunneling diodes with an embedded layer of self-assembled Ge hut cluster quantum dots in the Si barrier. In the low current regime a simple activation-type behavior with an astonishingly low activation energy in the order of 0.1 meV is determined. In the high current regime a region of negative differential conduction can be observed. We discuss the influence of different layer structures and magnetic fields. |
| Keywords: | Author Keywords: MSS-11 Ge quantum dots Switching Hysteresis Metal-insulator transition Hopping conduction |
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