Valley polarized electronic transport through a line defect in graphene: An analytical approach based on tight-binding model |
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Authors: | Liwei JiangXiaoling Lv Yisong Zheng |
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Institution: | National Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, China |
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Abstract: | We develop a tight-binding theory to study the electronic transport through an extended line defect in monolayer graphene. After establishing an analytical expression of the transmission probability, we clarify the following issues concerning the valley polarization in the electronic transport process. Firstly, we find that the valley polarization is robust in the total linear dispersion region. More interestingly, we find that the lattice deformation around the line defect play an important role in tuning the incident angle for complete transmission. Finally, we indicate that next nearest neighbor interaction only causes a small suppression to the valley polarization. |
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Keywords: | Valley polarization Line defect Graphene |
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