Theoretical study on transport properties of a BN co-doped SiC nanotube

We investigate the electronic transport properties of silicon carbide nanotubes (SiCNT) in presence of both boron (B) and nitrogen (N) impurities. The results show that co-doping BN impurities suppresses the important negative differential resistance (NDR) property. NDR suppression is attributed to the introduction of new electronic states near the Fermi level followed by weak orbital localization. BN co-doping results in exponential current-voltage (I-V) characteristics which is in contrast to linear I-V characteristics for individual boron and nitrogen doped SiCNTs. HOMO has no contribution from B impurity, whereas, LUMO has contribution from N impurity at low and high bias.