Electrical conduction in Cu/Mn multilayer films

Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford >5 nm. The thickness dependence of room temperature resistivity (_RT) and TCR shows oscillatory behaviour.