Laser-plasma deposited nanosized layers of ferromagnetic semiconductors and silicon- and germanium-based Heusler alloys |
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| Authors: | E S Demidov V V Podolskii B A Aronzon V V Rylkov V P Lesnikov V V Karzanov M V Sapozhnikov S N Gusev and S A Levchuk |
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| Institution: | 1.Lobachevsky State University of Nizhnii Novgorod,Nizhnii Novgorod,Russia;2.Physicotechnical Research Institute,Lobachevsky State University of Nizhnii Novgorod,Nizhnii Novgorod,Russia;3.Russian Research Center Kurchatov Institute,Moscow,Russia;4.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhnii Novgorod,Russia |
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| Abstract: | The electric, magnetic resonance, and magneto-optical properties of thin laser-plasma deposited 50–100-nm layers of diluted
magnetic semiconductors Ge:(Mn, Al)/GaAs, Ge:(Mn, Al)/Si, and Heusler alloys Co2MnSi/Si, Co2MnSi/GaAs, and Fe2CrSi/GaAs with T
c > 293 K were studied. Anomalous ferromagnetic resonance in Ge:(Mn, Al) layers, ferromagnetism in CoSi/Si characterized by
strong hysteresis in the magneto-optic Kerr effect, and the anomalous Hall effect at 293 K were observed. |
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