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Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers |
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| Authors: | V Ya Bratus' M Ya Valakh I P Vorona T T Petrenko V A Yukhimchuk P L F Hemment T Komoda |
| Institution: | a Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky 45, Kiev, 252028, Ukraine b School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK c Central Research Laboratory, Matsushita Electric Works Ltd, 1048 Kadoma, Kadoma-shi, Osaka 571, Japan |
| Abstract: | Thermally grown SiO2 layers on Si substrates implanted with Si+ ions with a dose of 6×1016 cm−2 were studied by the techniques of photoluminescence, electron paramagnetic resonance (EPR), and low-frequency Raman scattering. Distinct oxygen-vacancy associated defects in SiO2 and non-bridging oxygen hole centers were identified by EPR. The luminescence intensity in the 620 nm range was found to correlate with the number of these defects. The low-frequency Raman scattering technique was used to estimate the average size of the Si nanocrystallites formed after the implantation and thermal annealing at T>1100°C, which are responsible for the photoluminescence band with a maximum at 740 nm. The intensity of this band can be significantly enhanced by an additional treatment of the samples in a low-temperature RF plasma. |
| Keywords: | Photoluminescence EPR Silicon nanocrystallite Raman scattering |
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